LS5909 [Linear Systems]
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET; 低漏低漂移整体式双N沟道JFET
| 型号： | LS5909 |
| 厂家： | 
Linear Systems |
| 描述： | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
LOW DRIFT
|∆VGS1-2 /∆T|= 5µV/°C max.
G = 150fA TYP.
VP= 2V TYP.
ULTRA LOW LEAKAGE
LOW PINCHOFF
I
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
S1
G2
-65° to +150°C
+150°C
G1
S2
3
1
5
7
Maximum Voltage and Current for Each Transistor NOTE 1
D1
D1 2
6D2
-VGSS
Gate Voltage to Drain or Source
40V
D2
-VDSO
-IG(f)
-IG
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
S1
G2
10mA
10µA
G1
S2
22 X 20 MILS
BOTTOM VIEW
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905 UNITS CONDITIONS
|∆VGS1-2 /∆T| max. Drift vs. Temperature
5
10
20
40
40
µV/°C VDG= 10V, ID= 30µA
TA=-55°C to +125°C
|VGS1-2| max.
-IGmax.
Offset Voltage
5
1
1
2
5
5
1
1
2
5
10
1
15
1
15
3
mV
pA
nA
pA
nA
VDG=10V
ID= 30µA
Operating
-IGmax.
High Temperature
At Full Conduction
High Temperature
1
1
3
TA= +125°C
VDS= 0V
-IGSSmax.
-IGSSmax.
2
2
5
VGS= 20V
5
5
10
TA= +125°C
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
MIN.
40
TYP.
60
MAX.
UNITS
CONDITIONS
VDS= 0
--
--
V
V
ID= 1nA
ID= 0
BVGGO
Gate-to-Gate Breakdown
40
--
IG= 1nA
IS= 0
TRANSCONDUCTANCE
Yfss
Yfs
Full Conduction
70
50
300
100
500
200
µmho VDG= 10V
µmho VDG= 10V
VGS= 0
f= 1kHz
f= 1kHz
Typical Operation
Mismatch
ID= 30µA
|Yfs1-2/Yfs|
--
1
5
%
DRAIN CURRENT
IDSS
|IDSS1-2/IDSS
Full Conduction
60
--
400
2
1000
5
µA
VDG= 10V
VGS= 0
|
Mismatch at Full Conduction
%
GATE VOLTAGE
VGS(off) or VP
VGS
Pinchoff Voltage
0.6
--
2
4.5
4
V
V
VDS= 10V
VDS= 10V
ID= 1nA
Operating Range
--
ID= 30µA
GATE CURRENT
Gate-to-Gate Leakage
IGGO
--
1
--
pA
VGG=20V
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
OUTPUT CONDUCTANCE
YOSS
YOS
Full Conduction
Operating
--
--
--
5
µmho
µmho
VDG= 10V
VDG= 10V
VGS= 0
0.1
0.1
ID= 30µA
|YOS1-2
|
Differential
--
0.01
0.1
µmho
COMMON MODE REJECTION
CMR
CMR
-20 log |∆VGS1-2/∆VDS
|
|
--
--
90
90
--
--
dB
dB
∆VDS= 10 to 20V
∆VDS= 5 to 10V
ID= 30µA
ID= 30µA
-20 log |∆VGS1-2/∆VDS
NOISE
NF
en
Figure
--
--
--
1
dB
VDS= 10V
f= 100Hz
VGS= 0 RG= 10MΩ
NBW= 6Hz
Voltage
20
70
nV/√Hz VDG= 10V
ID= 30µA f= 10Hz
NBW= 1Hz
CAPACITANCE
CISS
CRSS
CDD
Input
--
--
--
--
--
--
3
pF
pF
pF
VDS= 10V
VDS= 10V
VDG= 20V
VGS= 0 f= 1MHz
VGS= 0 f= 1MHz
ID= 30µA
Reverse Transfer
Drain-to-Drain
1.5
0.1
P-DIP
TO-71
Six Lead
0.230
TO-78
(8.13)
(7.37)
0.320
0.290
0.335
0.370
DIA.
0.195
0.175
0.209
0.305
0.335
DIA.
S1 1
G2
SS
8
7
0.405
(10.29)
MAX.
MAX.
0.030
MAX.
0.150
0.115
0.165
0.185
0.040
D1 2
SS 3
G1 4
0.016
0.019
DIM. A
6 D2
5 S2
MIN. 0.500
6 LEADS
0.019
0.016
0.500 MIN.
0.050
0.016
0.021
DIM. B
SEATING
PLANE
DIA.
0.200
0.100
0.100
0.029
0.045
SOIC
3
7
3
7
2
1
8
4
5
6
2
4
0.150 (3.81)
0.158 (4.01)
1
8
5
6
0.100
S1 1
D1 2
SS
G1 4
8
7
6
5
G2
SS
D2
S2
45°
45°
0.188
0.197
(4.78)
(5.00)
3
0.046
0.036
0.048
0.028
0.028
0.034
(5.79)
0.228
(6.20)
0.244
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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